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Research Article
Surface Resistivity of Metal-Semiconductor Kontakt Comparative Evaluation Techniques
Remya Renjit1
Gopalakrishnan2
Susmi Jacob Jacob3
12Asst. Prof, Dept. Of Computer Science Engineering, Ace College Of Engineering, Kerala, India. 3 Prof, Dept. Of Computer Science Engineering, Ace College Of Engineering, Kerala, India.
Published Online: May-August 2023
Pages: 24-26
Cite this article
No DOIReferences
1. B.Ghosh,M. J.Carter,R.W.Miles,R.Hill,Electr.Lett.29 (5),1993,438-440.
2. B.Ghosh,D.Sc.Enggthesis, JadavpurUniversity,Kolkata, India,2006.
3. W. Schocley, Research and investigations of inverse epitaxial UHF power transistor, Report No. AL-TOR-64-207,AirForce
AtomicLaboratory, Wright-Patterson Air Force Base, Ohio, 1964.
4. B.Ghosh, Journal of Microelectronics Engineering,86,2009,2187-2206.
5. M.Chakraborty, International Journal of Engineering Science and Technology,3(7),2011,5956-5963.
6. V.V.Filippov, P.V.Frolov, N.N.Polyakov, Russian Physics.46,2005,726-735.
7. M.Chakraborty, International Journal of Engineering Research and Applications,1(3),2011,1017-1025.
8. G. P.Carvar, J.J. Kopanski,D. B.Novotny, R.A. Forman, IEEET ransactions on Electron Devices. 35,1988,489-497.
9. B.Ghosh,R.W.Miles, and M.J.Carter,Electronic Letters,32(10),1996,932-933.
10. M.Chakraborty, International Journal of Engineering Science and Technology,3(6),2011,4794-4800
2. B.Ghosh,D.Sc.Enggthesis, JadavpurUniversity,Kolkata, India,2006.
3. W. Schocley, Research and investigations of inverse epitaxial UHF power transistor, Report No. AL-TOR-64-207,AirForce
AtomicLaboratory, Wright-Patterson Air Force Base, Ohio, 1964.
4. B.Ghosh, Journal of Microelectronics Engineering,86,2009,2187-2206.
5. M.Chakraborty, International Journal of Engineering Science and Technology,3(7),2011,5956-5963.
6. V.V.Filippov, P.V.Frolov, N.N.Polyakov, Russian Physics.46,2005,726-735.
7. M.Chakraborty, International Journal of Engineering Research and Applications,1(3),2011,1017-1025.
8. G. P.Carvar, J.J. Kopanski,D. B.Novotny, R.A. Forman, IEEET ransactions on Electron Devices. 35,1988,489-497.
9. B.Ghosh,R.W.Miles, and M.J.Carter,Electronic Letters,32(10),1996,932-933.
10. M.Chakraborty, International Journal of Engineering Science and Technology,3(6),2011,4794-4800
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