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In this paper, examination of numerical models to decide contact resistivity of Metal-Semiconductor (M-S) contacts is made. Contact resistivity of M-S contact is gotten utilizing a numerical model in light of the upsides of ideality component and boundary level which are acquired from Current-voltage (I-V) qualities of M-S contact. Contact resistivity of M-S contact is gotten utilizing one more numerical model in view of two tuning-boundaries. Contact resistivity of M-S contact is additionally gotten utilizing Shockley's standard Transmission Line Model (TLM) procedure. Meager movies of Cd1-xZnxTe of 1µm thickness for 'x' shifting from 0.0567 to 0.2210 are the semiconductor materials created on Nickel covered glass substrates and enormous work capability Nickel is the contact focuses on these movies. I-V trademark information are recorded from these Ni-Cd1-xZnxTe stuctures. The upsides of contact resistivity of the M-S contacts acquired from these three techniques are contrasted and the outcomes are found with match well.